ट्रांझिस्टर

ट्रांझिस्टर हा अर्धवाहक गटातील एक इलेक्ट्रॉनिक घटक आहे. याला तीन पाय असतात. दोन डायोडची विशिस्ट पद्धतीने केलेेली रचना आणि जोडणी

१९४७ साली विल्यम शॉकली, जॉन बारडीन, वाल्टर ब्रटन या अमेरिकन वैज्ञानिकांनी ट्रांझिस्टरचा शोध लावला. जर्मेनियम, सिलिकॉन, इंडियम अशा अर्धवाहक मूलद्रव्यांपासून बनवलेल्या या इलेक्ट्रॉनिक घटकामुळे इलेक्ट्रॉनिक विश्वात अभूतपूर्व क्रांती झाली आणि सर्कीट अतिशय छोटे झाले.

ट्रांझिस्टर वापरून बनवलेली सर्कीट आकाराने लहान व जलद झाली. ट्रांझिस्टरचा सर्वात महत्त्वाचा गुण म्हणजे याला फारच कमी उर्जा लागते.

• जर्मेनियम
• सिलीकॉन
• फिल्ड इफेक्ट(FET)
• जंक्शन फिल्ड इफेक्ट(JFET)
• मेटल ऑक्साइड सिलीकॉन फिल्ड इफेक्ट(MOSFET)

• Amos S W & James M R. Principles of Transistor Circuits.
• Horowitz, Paul & Hill, Winfield. The Art of Electronics.
• Riordan, Michael & Hoddeson, Lillian. Crystal Fire. The invention of the transistor & the birth of the information age
• Warnes, Lionel. Analogue and Digital Electronics.

• Robert G. Arns (1998). "The other transistor: early history of the metal-oxide-semiconducor field-effect transistor". Engineering Science and Education Journal. 7 (5): 233–240. doi:10.1049/esej:19980509. साचा:ISSN. Unknown parameter |month= ignored (सहाय्य)
• "Herbert F. Mataré, An Inventor of the Transistor has his moment". 24 February 2003.
• Michael Riordan (2005). "How Europe Missed the Transistor". IEEE Spectrum. 42 (11): 52–57. doi:10.1109/MSPEC.2005.1526906. Unknown parameter |month= ignored (सहाय्य)
• C. D. Renmore. Silicon Chips and You.
• Wiley-IEEE Press. Complete Guide to Semiconductor Devices, 2nd Edition.

• The Transistor Educational content from Nobelprize.org
• BBC: Building the digital age photo history of transistors
• Transistor Flow Control — Scientific American Magazine (October 2005)
• The Bell Systems Memorial on Transistors Archived 2007-09-28 at the Wayback Machine.
• IEEE Virtual Museum, Let's Get Small: The Shrinking World of Microelectronics. All about the history of transistors and integrated circuits.
• Transistorized. Historical and technical information from the Public Broadcasting Service
• This Month in Physics History: November 17 to December 23, 1947: Invention of the First Transistor. From the American Physical Society
• 50 Years of the Transistor Archived 2007-07-14 at the Wayback Machine.. From Science Friday, December 12, 1997
• Bob's Virtual Transistor Museum & History Archived 2008-01-21 at the Wayback Machine.. Treasure trove of transistor history
• Jerry Russell's Transistor Cross Reference Database Archived 2007-02-16 at the Wayback Machine..
• The DatasheetArchive. Searchable database of transistor specifications and datasheets.
• Charts showing many characteristics and giving direct access to most datasheets for 2N Archived 2008-03-15 at the Wayback Machine., 2SA Archived 2007-10-13 at the Wayback Machine., 2SB Archived 2008-01-26 at the Wayback Machine.. 2SC Archived 2008-12-21 at the Wayback Machine., 2SD Archived 2008-01-15 at the Wayback Machine., 2SH-K Archived 2007-10-13 at the Wayback Machine., and other Archived 2008-01-11 at the Wayback Machine. numbers.
• http://userpages.wittenberg.edu/bshelburne/Comp150/LogicGatesCircuits.html Archived 2008-12-20 at the Wayback Machine.

इ.स. १९६० पासून अनेक प्रकारचे ट्रांझिस्टर उपलब्ध झाले आहेत. त्यासाठी लागणारे विश्लेषण खालील डाटाशीट्स मध्ये मिळेल.

• 2N3904/2N3906, BC182 Archived 2008-07-23 at the Wayback Machine./BC212 and BC546/BC556: Ubiquitous, BJT, general-purpose, low-power, complementary pairs. They have plastic cases and cost roughly ten cents U.S. in small quantities, making them popular with hobbyists.
• AF107: Germanium, 0.5 watt, 250 MHz PNP BJT.
• BFP183: Low power, 8 GHz microwave NPN BJT.
• LM394 Archived 2008-05-28 at the Wayback Machine.: "supermatch pair", with two NPN BJTs on a single substrate.
• 2N2219A/2N2905A: BJT, general purpose, medium power, complementary pair. With metal cases they are rated at about one watt.
• 2N3055/MJ2955: For years, the venerable NPN 2N3055 has been the "standard" power transistor. Its complement, the PNP MJ2955 arrived later. These 1 MHz, 15 A, 60 V, 115 W BJTs are used in audio power amplifiers, power supplies, and control.
• 2N7000 is a typical small-signal field-effect transistor.
• 2SC3281/2SA1302: Made by Toshiba, these BJTs have low-distortion characteristics and are used in high-power audio amplifiers. They have been widely counterfeited [१] Archived 2008-12-18 at the Wayback Machine..
• BU508^{[permanent dead link]}: NPN, 1500 V power BJT. Designed for television horizontal deflection, its high voltage capability also makes it suitable for use in ignition systems.
• MJ11012/MJ11015: 30 A, 120 V, 200 W, high power Darlington complementary pair BJTs. Used in audio amplifiers, control, and power switching.
• 2N5457/2N5460: JFET (depletion mode), general purpose, low power, complementary pair.
• BSP296/BSP171: IGFET (enhancement mode), medium power, near complementary pair. Used for logic level conversion and driving power transistors in amplifiers.
• IRF3710/IRF5210 Archived 2008-12-18 at the Wayback Machine.: IGFET (enhancement mode), 40 A, 100 V, 200 W, near complementary pair. For high-power amplifiers and power switches, especially in automobiles.

ज्या पार्टचे क्रमांक "2S" पासून सुरू होतात ते जपानी आहेत. ज्या पार्टचे क्रमांक 2SA वा 2SB ते PNP BJTs आहेत. ज्या पार्टचे क्रमांक 2SC or 2SD ते NPN BJTs आहेत. ज्या पार्टचे क्रमांक 2SJ ते P-channel FETs आहेत. (दोन्ही JFETs आणि MOSFETs). ज्या पार्टचे क्रमांक 2SK ते N-channel FETs आहेत. (दोन्ही JFETs आणि MOSFETs).

निनाद ००:१३, २४ डिसेंबर २००८ (UTC)